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參數(shù)資料
| 型號： | 2SC5194-T2FB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SC5194-T2FB |
2SC5194
4
1
Collector Current IC (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
Noise
Figure
NF
(dB)
7
20
10
2
3
5
1
2
3
0.1
1
Collector to Base Voltage VCB (V)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
Feed-back
Capacitance
C
re
(pF)
20
2
5
10
0.5
1.0
0.5
0.1
Frequency f (GHz)
NOISE FIGURE vs. FREQUENCY
Noise
Figure
NF
(dB)
5
0.5
1
2
1.0
1.5
0
0.1
Frequency f (GHz)
MAXIMUM AVAILABLE GAIN/INSERTION
POWER GAIN vs. FREQUENCY
VCE = 1 V
IC = 5 mA
VCE = 1 V
IC = 5 mA
5
0.2
0.5
1
10
20
30
Maximum
Available
Power
Gain
MAG
(dB)
Insertion
Power
Gain
|S
21e
|2
(dB)
MAG
|S21e|
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5195-T1FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5196-O | 6 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SC5196-O | 6 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SC5196-R | 6 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SC5196 | 6 A, 80 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5195 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC5195(NE68819) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5195-T1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SC5196 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| 2SC5196_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type Power Amplifier Applications |
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