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參數(shù)資料
| 型號： | 2SC5194-T2FB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SC5194-T2FB |
2SC5194
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
ICBO
VCB = 5 V, IE = 0
100
nA
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
100
nA
DC Current Gain
hFE
VCE = 1 V, IC = 3 mANote 1
80
160
Insertion Power Gain (1)
|S21e|2
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
3.0
4.0
dB
Insertion Power Gain (2)
|S21e|2
VCE = 3 V, IC = 20 mA, f = 2.0 GHz
8.5
dB
Noise Figure (1)
NF
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
1.7
2.5
dB
Noise Figure (2)
NF
VCE = 3 V, IC = 7 mA, f = 2.0 GHz
1.5
dB
Gain Bandwidth Product (1)
fT
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
4
5
GHz
Gain Bandwidth Product (2)
fT
VCE = 3 V, IC = 20 mA, f = 2.0 GHz
10
GHz
Collector Capacitance
Cre
VCB = 1 V, IE = 0, f = 1.0 MHzNote 2
0.65
0.8
pF
Notes 1. Pulse Measurement: PW
≤ 350
s, Duty cycle ≤ 2 %, Pulsed
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE Classification
Rank
FB
Marking
T88
hFE
80 to 160
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5195-T1FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5196-O | 6 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SC5196-O | 6 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SC5196-R | 6 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SC5196 | 6 A, 80 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5195 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC5195(NE68819) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5195-T1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SC5196 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| 2SC5196_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type Power Amplifier Applications |
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