參數(shù)資料
型號: 2SC5196-O
元件分類: 功率晶體管
英文描述: 6 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-16C1A, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 120K
代理商: 2SC5196-O
2SC5196
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5196
Power Amplifier Applications
Complementary to 2SA1939
Suitable for use in 40-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
6
A
Base current
IB
0.6
A
Collector power dissipation
(Tc = 25°C)
PC
60
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
相關(guān)PDF資料
PDF描述
2SC5196-R 6 A, 80 V, NPN, Si, POWER TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2SC5197 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type Power Amplifier Applications
2SC5197_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type Power Amplifier Applications
2SC5197O 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 8A I(C) | TO-247VAR