參數(shù)資料
型號(hào): 2SC5183
廠商: NEC Corp.
英文描述: NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
中文描述: npn型外延硅晶體管中的4針mini -模低噪聲微波功放包裝
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 60K
代理商: 2SC5183
6
2SC5183
V
CE
= 1 V, I
C
= 7 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.626
0.446
0.324
0.259
0.227
0.218
0.235
0.245
0.262
0.291
0.319
0.344
0.385
0.406
0.424
ANG
–44.6
–75.6
–100.3
–123.9
–147.9
–170.2
174.1
158.1
145.6
136.7
127.8
122.8
116.5
112.7
103.3
MAG
15.305
11.046
8.281
6.585
5.416
4.559
3.971
3.502
3.087
2.821
2.558
2.392
2.223
2.102
1.934
ANG
141.4
117.5
102.6
90.9
82.0
74.4
67.5
61.3
55.6
50.0
44.8
39.8
34.9
29.5
24.1
MAG
0.039
0.061
0.081
0.101
0.116
0.130
0.151
0.162
0.181
0.197
0.206
0.230
0.238
0.265
0.270
ANG
71.6
60.1
54.9
55.1
52.3
50.0
49.2
46.5
44.9
41.3
37.0
35.6
33.3
31.4
25.9
MAG
0.817
0.608
0.475
0.386
0.324
0.283
0.243
0.219
0.193
0.160
0.157
0.140
0.123
0.109
0.143
ANG
–28.6
–44.8
–53.3
–58.3
–62.0
–66.1
–73.8
–79.1
–89.0
–94.3
–103.0
–116.8
–127.2
–140.7
–164.1
V
CE
= 1 V, I
C
= 10 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.522
0.352
0.254
0.213
0.202
0.206
0.229
0.246
0.269
0.291
0.315
0.344
0.383
0.407
0.437
ANG
–52.6
–85.4
–113.2
–137.8
–162.9
176.6
162.4
148.9
136.1
130.9
123.6
119.3
114.1
109.0
102.5
MAG
17.862
12.003
8.704
6.819
5.571
4.672
4.057
3.570
3.154
2.880
2.606
2.430
2.261
2.135
1.968
ANG
135.4
111.9
98.2
87.5
79.2
72.2
65.8
59.9
54.3
48.9
44.0
38.9
34.4
29.2
23.8
MAG
0.037
0.059
0.073
0.095
0.113
0.127
0.149
0.163
0.181
0.202
0.213
0.230
0.246
0.269
0.280
ANG
67.1
58.8
60.9
57.5
55.9
54.6
52.7
50.0
47.5
43.7
41.1
37.5
35.6
32.5
26.4
MAG
0.753
0.528
0.407
0.323
0.271
0.236
0.201
0.181
0.155
0.134
0.132
0.118
0.101
0.099
0.144
ANG
–33.4
–48.7
–55.6
–60.4
–64.3
–70.0
–76.8
–84.0
–93.3
–102.0
–113.6
–131.8
–143.1
–156.8
–177.6
V
CE
= 1 V, I
C
= 20 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.339
0.229
0.185
0.191
0.203
0.223
0.253
0.276
0.294
0.320
0.354
0.375
0.409
0.429
0.459
ANG
–73.6
–112.5
–146.6
–169.2
171.9
157.5
147.3
137.6
129.5
124.1
117.7
114.8
110.0
105.6
99.1
MAG
21.029
12.708
8.896
6.844
5.545
4.636
4.022
3.531
3.113
2.840
2.562
2.398
2.226
2.094
1.936
ANG
125.3
103.7
91.9
82.6
75.2
68.8
62.9
57.4
52.1
47.0
42.1
37.4
33.0
27.9
22.4
MAG
0.030
0.051
0.076
0.094
0.117
0.132
0.151
0.176
0.185
0.208
0.228
0.244
0.258
0.285
0.296
ANG
69.4
65.5
66.7
61.4
61.5
57.9
53.6
50.7
49.3
45.0
42.2
40.0
35.2
31.6
26.4
MAG
0.606
0.390
0.291
0.237
0.190
0.166
0.144
0.127
0.109
0.103
0.102
0.105
0.103
0.119
0.166
ANG
–42.1
–54.8
–60.3
–63.9
–69.2
–76.1
–84.7
–99.6
–112.8
–131.8
–141.3
–167.8
–176.7
174.6
164.1
相關(guān)PDF資料
PDF描述
2SC5183-T1 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5183-T2 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184-T1 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184-T2 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
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