參數(shù)資料
型號: 2SC5183
廠商: NEC Corp.
英文描述: NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
中文描述: npn型外延硅晶體管中的4針mini -模低噪聲微波功放包裝
文件頁數(shù): 5/12頁
文件大?。?/td> 60K
代理商: 2SC5183
5
2SC5183
S-PARAMETERS
V
CE
= 1 V, I
C
= 1 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.939
0.896
0.821
0.754
0.662
0.587
0.529
0.480
0.441
0.436
0.427
0.434
0.461
0.472
0.498
ANG
–18.1
–34.7
–52.0
–69.6
–86.6
–103.2
–121.1
–137.1
–154.9
–170.7
174.4
163.8
150.8
141.8
131.3
MAG
3.502
3.354
3.189
3.019
2.797
2.549
2.353
2.157
1.961
1.824
1.673
1.588
1.504
1.410
1.314
ANG
164.0
149.0
134.7
120.1
107.6
95.6
84.9
74.7
66.2
57.9
50.3
43.6
36.8
30.1
23.3
MAG
0.046
0.090
0.129
0.154
0.180
0.196
0.203
0.208
0.215
0.213
0.210
0.206
0.210
0.220
0.210
ANG
75.5
67.8
58.2
47.7
40.3
33.5
26.1
21.5
16.7
14.3
11.6
9.7
10.1
10.1
4.9
MAG
0.982
0.938
0.891
0.821
0.750
0.687
0.627
0.572
0.527
0.485
0.458
0.435
0.413
0.391
0.361
ANG
–10.2
–19.8
–28.9
–37.2
–43.0
–49.7
–56.9
–61.4
–67.0
–70.8
–75.3
–81.6
–85.1
–91.6
–102.3
V
CE
= 1 V, IC = 3 mA, ZO = 50
FREQUENCY
S11
S21
S12
S22
MHz
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.814
0.691
0.552
0.458
0.377
0.324
0.302
0.291
0.293
0.307
0.329
0.361
0.386
0.408
0.433
ANG
–29.5
–54.3
–76.7
–97.4
–117.4
–137.3
–156.7
–174.1
169.8
156.1
145.5
137.1
128.9
121.5
113.5
MAG
9.022
7.707
6.431
5.442
4.633
3.974
3.506
3.114
2.770
2.540
2.297
2.160
2.017
1.904
1.760
ANG
154.0
132.8
116.4
102.2
91.3
81.8
73.5
66.0
59.3
52.8
46.8
41.1
35.7
30.0
24.1
MAG
0.047
0.077
0.103
0.120
0.130
0.143
0.156
0.163
0.177
0.192
0.201
0.220
0.225
0.244
0.251
ANG
75.7
64.2
54.4
48.2
45.8
41.6
38.0
37.7
35.6
33.1
30.8
30.0
26.7
26.2
21.4
MAG
0.930
0.801
0.679
0.572
0.492
0.432
0.376
0.343
0.308
0.274
0.251
0.222
0.204
0.188
0.190
ANG
–18.2
–33.5
–43.6
–51.0
–55.9
–61.6
–67.2
–72.7
–78.0
–82.8
–86.2
–95.2
–100.8
–106.8
–126.4
V
CE
= 1 V, I
C
= 5 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.711
0.545
0.408
0.330
0.275
0.248
0.249
0.251
0.264
0.295
0.319
0.339
0.380
0.405
0.425
ANG
–38.3
–66.7
–90.5
–112.0
–135.4
–156.0
–175.0
167.3
153.7
143.5
133.6
127.8
120.5
115.7
108.2
MAG
12.750
9.866
7.672
6.228
5.180
4.383
3.837
3.385
2.991
2.740
2.476
2.317
2.161
2.042
1.880
ANG
146.7
123.4
107.6
94.8
85.2
77.0
69.7
62.9
56.8
51.0
45.5
40.3
35.3
29.6
24.1
MAG
0.040
0.066
0.086
0.107
0.118
0.137
0.147
0.163
0.176
0.193
0.203
0.221
0.233
0.253
0.263
ANG
68.6
58.5
54.8
51.2
48.8
47.4
46.0
43.1
42.2
38.8
35.9
34.3
30.8
30.2
24.5
MAG
0.870
0.686
0.553
0.451
0.385
0.337
0.294
0.257
0.224
0.195
0.183
0.163
0.141
0.133
0.152
ANG
–24.6
–40.6
–49.8
–56.2
–59.7
–65.0
–71.2
–75.9
–83.7
–89.5
–94.2
–109.5
–114.4
–122.3
–147.9
相關PDF資料
PDF描述
2SC5183-T1 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5183-T2 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184-T1 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184-T2 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
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