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參數(shù)資料
| 型號(hào)： | 2SC5181FB |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大小： | 217K |
| 代理商： | 2SC5181FB |
2SC5181
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector Cutoff Current
ICBO
100
nA
VCB = 5 V, IE = 0
Emitter Cutoff Current
IEBO
100
nA
VEB = 1 V, IC = 0
DC Current Gain
hFE
70
140
VCE = 2 V, IC = 7 mA*1
Insertion Power Gain (1)
|S21e|2
8.0
10.5
dB
VCE = 2 V, IC = 7 mA, f = 2 GHz
Insertion Power Gain (2)
|S21e|2
7.0
9.0
dB
VCE = 1 V, IC = 5 mA, f = 2 GHz
Noise Figure (1)
NF
1.5
2.0
dB
VCE = 2 V, IC = 3 mA, f = 2 GHz
Noise Figure (2)
NF
1.5
2.0
dB
VCE = 1 V, IC = 3 mA, f = 2 GHz
Gain Bandwidth Product (1)
fT
10
13
GHz
VCE = 2 V, IC = 7 mA, f = 2 GHz
Gain Bandwidth Product (2)
fT
8.5
12
GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
Feedback Capacitance
Cre
0.4
0.6
pF
VCB = 2 V, IE = 0 mA, f = 1 MHz*2
*1.
Measured with pulses: Pulse width
≤ 350
s, duty cycle ≤ 2 %, pulsed
*2.
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
hFE Class
Class
FB
Marking
84
hFE
70 to 140
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| 2SC5186-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5181-FB(T1) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5181T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-416 |
| 2SC5181-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 2SC5182T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | TO-236AB |
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