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參數(shù)資料
| 型號(hào)： | 2SC5181FB |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 217K |
| 代理商： | 2SC5181FB |
SILICON TRANSISTOR
FEATURES
Low current consumption and high gain
|S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz
Ultra Super Mini-Mold package
ORDERING INFORMATION
PART
QUANTITY
ARRANGEMENT
NUMBER
2SC5181
50 units/box
2SC5181-T1
3 000 units/reel
*
Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
5V
Collector to Emitter Voltage
VCEO
3V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
10
mA
Total Power Dissipation
PT
30
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
2SC5181
Document No. P12105EJ2V0DS00 (2nd edition)
(Previous No. TC-2478)
Date Published
November 1996 N
Printed in Japan
1994
DATA SHEET
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
1.6 ± 0.1
0.8 ± 0.1
3
2
1
1.6
±
0.1
1.0
0.5
0.75
±
0.05
0.6
0.15
–0.05
+0.1
0.3
–0
+0.1
0.2
–0
+0.1
0
to
0.1
84
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
PACKAGE DIMENSIONS
(Units: mm)
Embossed tape, 8 mm wide, pin No. 3
(collector) facing the perforation
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
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PDF描述 |
|---|---|
| 2SC5182-T1FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5182-T2FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5186-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5186 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5192-T1FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5181-FB(T1) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5181T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-416 |
| 2SC5181-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 2SC5182T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | TO-236AB |
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