參數(shù)資料
型號: 2SC5186-FB
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: ULTRA SUPER MINIMOLD PACKAGE-3
文件頁數(shù): 1/7頁
文件大小: 46K
代理商: 2SC5186-FB
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5186
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR LOW-NOISE MICROWAVE AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
Document No. PU10213EJ01V0DS (1st edition)
(Previous No. P12110EJ2V0DS00)
Date Published January 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 1994, 2003
FEATURES
Low noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
3-pin ultra super minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5186
50 pcs (Non reel)
8 mm wide embossed taping
2SC5186-T1
3 kpcs/reel
Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
5V
Collector to Emitter Voltage
VCEO
3V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Total Power Dissipation
Ptot
Note
90
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Free air
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