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參數資料
| 型號： | 2SC5186-FB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件頁數： | 2/7頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2SC5186-FB |
Data Sheet PU10213EJ01V0DS
2
2SC5186
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
–
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
–
100
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 20 mA
70
–
140
–
RF Characteristics
Gain Bandwidth Product (1)
fT
VCE = 2 V, IC = 20 mA, f = 2 GHz
9
11
–
GHz
Gain Bandwidth Product (2)
fT
VCE = 1 V, IC = 10 mA, f = 2 GHz
7
9
–
GHz
Insertion Power Gain (1)
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz
8.5
10
–
dB
Insertion Power Gain (2)
S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz
6.0
7.5
–
dB
Noise Figure (1)
NF
VCE = 2 V, IC = 3 mA, f = 2 GHz
–
1.3
2.0
dB
Noise Figure (2)
NF
VCE = 1 V, IC = 3 mA, f = 2 GHz
–
1.3
2.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
–
0.4
0.8
pF
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
FB
Marking
86
hFE Value
70 to 140
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相關代理商/技術參數 |
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|---|---|
| 2SC5186T1 | 制造商:NEC 功能描述:New |
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| 2SC5186-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5187 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1.5A I(C) | SOT-89 |
| 2SC5188 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SOT-89 |
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