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參數(shù)資料
| 型號： | 2SC5180 |
| 廠商： | NEC Corp. |
| 英文描述： | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 中文描述： | npn型外延硅晶體管超微型模低噪聲微波功放包裝 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2SC5180 |
2
2SC5180
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector Cutoff Current
I
CBO
100
nA
V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current
I
EBO
100
nA
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
70
140
V
CE
= 2 V, I
C
= 7 mA
*
1
Insertion Power Gain (1)
S
21e
2
10
12
dB
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
Insertion Power Gain (2)
S
21e
2
8.5
11
dB
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Noise Figure (1)
NF
1.5
2.0
dB
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
Noise Figure (2)
NF
1.5
2.0
dB
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Gain Bandwidth Product (1)
f
T
12
15.5
GHz
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
Gain Bandwidth Product (2)
f
T
10
13
GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Feedback Capacitance
* 1 :
Measured with pulses : Pulse width = 350
μ
s, duty cycle = 2 %, pulsed
C
re
0.3
0.5
pF
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
*
2
* 2 :
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal of the bridge.
h
FE
class
Class
FB
Marking
T84
h
FE
70 to 140
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5181 | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 2SC5181-T1 | NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182-T1 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182-T2 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5180(NE68618) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5180T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-343R |
| 2SC5181 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5181(NE68619) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5181-FB(T1) | 制造商:Renesas Electronics Corporation 功能描述: |
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