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參數(shù)資料
| 型號： | 2SC5180 |
| 廠商： | NEC Corp. |
| 英文描述： | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 中文描述： | npn型外延硅晶體管超微型模低噪聲微波功放包裝 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 54K |
| 代理商： | 2SC5180 |
1994
DATA SHEET
SILICON TRANSISTOR
2SC5180
FEATURES
Low current consumption and high gain
S
21e
2
= 12 dB TYP. @ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
S
21e
2
= 11 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Supper Mini-Mold package
ORDERING INFORMATION
PART
NUMBER
QUANTITY
ARRANGEMENT
Embossed tape, 8 mm wide, pins No. 3
(base) and No. 4 (emitter) facing the
perforations
Embossed tape, 8 mm wide, pins No. 1
(collector) and No. 2 (emitter) facing the
perforations
2SC5180–T1
3 000 units/reel
2SC5180–T2
*
Contact your NEC sales representatives to order samples for evaluation (available
in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
V
V
V
10
30
150
mA
mW
°
C
°
C
–65 to +150
2
1.25 ± 0.1
2
1
3
4
(
0
0
0
+
–
0
+
–
0
+
–
0
+
–
(
0
0
0
+
–
0
2.1 ± 0.2
T
PACKAGE DIMENSIONS
(Units : mm)
1. Collector
2. Emitter
3. Base
4. Emitter
PIN CONNECTIONS
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12104EJ2V0DS00 (2nd edition)
(Previous No. TC-2477)
Date Published December 1996 N
Printed in Japan
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5181 | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 2SC5181-T1 | NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182-T1 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182-T2 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5180(NE68618) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5180T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-343R |
| 2SC5181 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5181(NE68619) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5181-FB(T1) | 制造商:Renesas Electronics Corporation 功能描述: |
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