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參數(shù)資料
| 型號： | 2SC5182 |
| 廠商： | NEC Corp. |
| 英文描述： | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 中文描述： | 核動力源外延硅晶體管微型模低噪聲微波功放包裝 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SC5182 |
1994
DATA SHEET
SILICON TRANSISTOR
2SC5182
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
Low noise
NF = 1.3 dB
TYP.
@ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB
TYP.
@ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Mini-Mold package
EIAJ: SC-59
ORDERING INFORMATION
PART
NUMBER
QUANTITY
ARRANGEMENT
2SC5182-T1
Embossed tape, 8 mm wide,
Pin No. 3 (Collector)
facing the perforations
2SC5182-T2
3 000 units/reel
Embossed tape, 8 mm wide,
Pins No. 1 (Emitter) and No. 2 (Base)
facing the perforations
*
Contact your NEC sales representative to order samples for evaluation
(available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
V
V
V
30
90
150
mA
mW
C
C
–65 to +150
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12106EJ2V0DS00 (2nd edition)
(Previous No. TC-2479)
Date Published November 1996 N
Printed in Japan
PACKAGE DIMENSIONS
(Units: mm)
2
0
0
0
+
1.5
0
+
2.8±0.2
0.65
+0.1
3
2
1
0
+
0
1
0
Marking
T
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5182-T1 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182-T2 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC518383R | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 2SC5183 | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5183-T1 | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5182T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | TO-236AB |
| 2SC5182-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5183 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 2SC518383R | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
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