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參數(shù)資料
| 型號(hào)： | 2SC5182 |
| 廠商： | NEC Corp. |
| 英文描述： | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 中文描述： | 核動(dòng)力源外延硅晶體管微型模低噪聲微波功放包裝 |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | 2SC5182 |
4
2SC5182
NOISE FIGURE vs.
COLLECTOR CURRENT
I
C
- Collector Current - mA
N
1
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
V
CB
- Collector to Base Voltage - V
C
0
0
0.2
1
2
3
4
10
100
0.3
0.4
0.5
0.6
1.0
2.0
3.0
4.0
5.0
V
CE
= 2 V
V
CE
= 1 V
f = 2 GHz
f = 1 MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5182-T1 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182-T2 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC518383R | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 2SC5183 | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5183-T1 | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5182T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | TO-236AB |
| 2SC5182-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5183 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 2SC518383R | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
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