參數(shù)資料
型號: 2SC4814
廠商: NEC Corp.
英文描述: NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
中文描述: NPN硅外延的高晶體管高速開關(guān)
文件頁數(shù): 1/6頁
文件大?。?/td> 161K
代理商: 2SC4814
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confirm that this is the latest version.
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2002
Document No. D15604EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4814
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The 2SC4814 is a power transistor featuring low-saturation voltage and high h
FE
. This transistor is ideal for high-
precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for
solenoid driving in automotive equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
Low V
CE(sat)
: V
CE(sat)
0.3 V
High h
FE
:
On-chip dumper-diode
Auto-mounting possible in radial taping specifications
@I
C
= 1.5 A, I
B
= 10 mA
h
FE
= 300 to 1,200 @V
CE
= 2.0 V, I
C
= 1.0 A
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
120
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
±
2.5
A
Collector current (pulse)
I
C(pulse)
PW
300
μ
s, duty cycle
10%
±
5.0
A
Base current (DC)
I
B(DC)
1.0
A
Total power dissipation
P
T
Ta = 25
°
C
1.8
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
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