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參數資料
| 型號： | 2SC4815L |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-126VAR |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 5A條一（c）|至126VAR |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 166K |
| 代理商： | 2SC4815L |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D15605EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4815
NPN SILICON
EPITAXIAL
TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The 2SC4815 is a power transistor developed for high-speed switching and features low V
CE(sat)
and high h
FE
.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost
reduction.
FEATURES
High h
FE
and low V
CE(sat)
:
V
CE(sat)
≤
0.3 V @I
C
= 3.0 A, I
B
= 0.15 A
h
FE
≥
100
@V
CE
= 2.0 V, I
C
= 1.0 A
Available for auto mount in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
5.0
A
Collector current (pulse)
I
C(pulse)
*
10
A
Base current (DC)
I
B(DC)
2.5
A
Total power dissipation
P
T
1.8
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
300
μ
s, duty cycle
≤
10%
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC4815-T-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 5A 3-Pin MP-10 T/R |
| 2SC4815-T-AZ(L) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4815-T-AZ-K | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4820 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR FM20 900V 6A 30W BCE |
| 2SC4833-4000 | 功能描述:兩極晶體管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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