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| 型號： | 2SC4827 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP Epitaxial Planar Silicon Transistor for High Definition CRT Display Video Output Applications(用于高分辨率CRT顯示視頻輸出應(yīng)用的PNP硅外延平面型晶體管) |
| 中文描述： | 進步黨硅外延平面晶體管高清晰度CRT顯示器視頻輸出應(yīng)用（用于高分辨率CRT顯示器顯示視頻輸出應(yīng)用的新進步黨硅外延平面型晶體管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 109K |
| 代理商： | 2SC4827 |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistor
2SA1853/2SC4827
High Definition CRT Display
Video Output Applications
Ordering number:EN4717
91098HA (KT)/62094MT (KOTO) AX-8133 No.4717–1/4
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Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2084B
[2SA1853/2SC4827]
Applications
· High-definition CRT display video output. Wide-
band amplifier.
Features
· Adoption of FBET process.
· High f
T
: f
T
=300MHz.
· High breakdown voltage : V
CEO
=200V.
· Small reverse transfer capacitance and excellent
high-frequency characteristic :
C
re
=2.2pF/NPN, 2.7pF/PNP.
· Possible to offer the 2SA1853/2SC4827 devices in a
tepa reel packaging, which facilitates automatic
incertion.
Electrical Characteristics
at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
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| 2SA1853 | PNP Epitaxial Planar Silicon Transistor for High Definition CRT Display Video Output Applications(用于高分辨率CRT顯示視頻輸出應(yīng)用的PNP硅外延平面型晶體管) |
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| 2SC4833-4000 | 功能描述:兩極晶體管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4833-7000 | 功能描述:兩極晶體管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4833-7012 | 功能描述:兩極晶體管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4833-7100 | 功能描述:兩極晶體管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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