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參數(shù)資料
| 型號(hào)： | 2SC4811 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING |
| 中文描述： | NPN硅外延晶體管（達(dá)林頓連接筆記本高）高速開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 130K |
| 代理商： | 2SC4811 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D15602EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SC4811
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
The 2SC4811 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such
as PWM control for pulse motors or brushless motors in OA and FA equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
Auto-mounting possible in radial taping specifications
Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
On-chip C-to-E reverse diode
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
8.0
V
Collector current (DC)
I
C(DC)
±
8.0
A
Collector current (pulse)
I
C(pulse)
*
±
16
A
Base current (DC)
I
B(DC)
0.8
A
Total power dissipation
P
T
**
1.8
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
300
μ
s, duty cycle
≤
10%
**T
a
= 25
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4811K | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 8A I(C) | TO-126VAR |
| 2SC4811L | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC4811M | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 8A I(C) | TO-126VAR |
| 2SC4813 | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 2SC4814 | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4815-T-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 5A 3-Pin MP-10 T/R |
| 2SC4815-T-AZ(L) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4815-T-AZ-K | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4820 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR FM20 900V 6A 30W BCE |
| 2SC4833-4000 | 功能描述:兩極晶體管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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