參數(shù)資料
型號(hào)： 2SC4300
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓開(kāi)關(guān)晶體管）)
中文描述： 5 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝： TO-3PF, FM100, 3 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 26K
代理商： 2SC4300
98
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
2S C4300
Application :
Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4300
900
800
7
5(Pulse10)
2.5
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC4300
100
max
100
max
800
min
10to30
0.5
max
1.2
max
6
typ
75
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=0.4A
I
C
=2A, I
B
=0.4A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
t
on
t
stg
t
f
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat),V
BE
(sat)–I
C
Temperature Characteristics
(Typical)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area
(Single Pulse)
0
0
2
1
3
4
5
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
600mA
500mA
400mA
300mA
200mA
700mA
I
B
=100mA
0.03
0.1
0.05
1
5
10
0.5
2
1
(I
C
/I
B
=5)
Collector Current I
C
(A)
V
BE
(sat)
125C (Case Temp)
25C (Case Temp)
–55C (Case Temp)
2C
–C
V
CE
(sat)
1
2
5
C
(
C
a
s
e
T
e
m
p
)
0.1
1
0.5
5
0.2
0.5
5
10
1
S
t
o
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
on
t
f
V
CC
250V
I
C
:I
B1
:–I
B2
=2:0.3:1 Const.
0.1
1
2
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
80
60
40
20
3.5
00
50
100
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
100
500
50
1000
1
0.5
0.1
0.05
0.01
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
10
50
100
500
1000
0.05
0.01
1
0.5
0.1
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
100
μ
s
1ms
10
μ
s
C
C
(
B
B
(
Without Heatsink
Natural Cooling
0
5
1
2
3
4
0
1.2
0.4
0.6
0.8
1.0
0.2
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
1Cee)
2 se
–(T
0.02
0.1
0.05
1
5
0.5
5
10
50
Collector Current I
C
(A)
D
F
(V
CE
=4V)
125C
25C
–55C
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
125
2
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–1
t
on
(
μ
s)
1
max
t
stg
(
μ
s)
5
max
t
f
(
μ
s)
1
max
I
(A)
0.3
V
(V)
10
External Dimensions
FM100(TO3PF)
4.4
1.5
1.5
B
E
C
5.45
±0.1
3.3
±0.2
1
3
1.75
0
±
2.15
1.05
+0.2
-0.1
5.45
±0.1
2
±
1
9
±
5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
相關(guān)PDF資料
PDF描述
2SC4301 Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓開(kāi)關(guān)晶體管）)
2SC4304 Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開(kāi)關(guān)晶體管）)
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