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參數(shù)資料
| 型號： | 2SC4332 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 中文描述： | NPN硅外延的高晶體管高速開關(guān) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SC4332 |
SILICON POWER TRANSISTORS
2SC4332, 2SC4332-Z
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
Document No. D16430EJ1V0DS00 (1st edition)
Date Published October 2002 NS CP(K)
Printed in Japan
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SC4332 and 2SC4332-Z are mold power transistors
developed for high-speed switching and features a very low
collector-to-emitter saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
Low collector saturation voltage
V
CE(sat)
= 0.3 V MAX. (I
C
= 3 A
/
I
B
= 0.15 A)
Fast switching speed:
t
f
≤
0.3
μ
s MAX. (I
C
= 3 A)
High DC current gain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
V
CBO
100
V
Collector to Emitter Voltage
V
CEO
60
V
Base to Emitter Voltage
V
EBO
7.0
V
Collector Current (DC)
I
C(DC)
5.0
A
Collector Current (pulse)
I
C(pulse)
Note1
10
A
Base Current (DC)
I
B(DC)
2.5
A
Total Power Dissipation
P
T
(T
C
= 25
°
C)
15
W
Total Power Dissipation
P
T
(T
A
= 25
°
C)
1.0
Note2
, 2.0
Note3
W
Junction Temperature
T
j
150
°
C
Storage Temperature
Notes 1.
PW
≤
10 ms, duty cycle
≤
50%
2.
Printing borard mounted
3.
7.5 mm
2
x 0.7 mm, ceramic board mounted
T
stg
55 to +150
°
C
PACKAGE DRAWING (Unit: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Fin (collector)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4332-Z | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 2SC4336 | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 2SC4342 | Silicon Power Transistor |
| 2SC4346 | NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING |
| 2SC4346-Z | ECONOLINE: RU - Twin Independent Outputs- Output/Output Isolation 1kVDC- Power Sharing on Outputs- Input/Output Isolation 1kVDC- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No Extern. Components Required- Custom Solutions Available- Efficiency t |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4332-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4332-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4332-L-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4332-Z-AZ(K) | 制造商:Renesas Electronics 功能描述:NPN Bulk 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 5A 3-Pin(2+Tab) TO-252 |
| 2SC4333-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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