參數(shù)資料
型號(hào)： 2SC4304
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開(kāi)關(guān)晶體管）)
中文描述： 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： TO-220F, FM20, 3 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 25K
代理商： 2SC4304
100
Silicon NPN Triple Diffused Planar Transistor
(High Voltage High Speed Switchihg Transistor)
2S C4304
Application :
Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4304
900
800
7
3(
Pulse
6)
1.5
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC4304
100
max
100
max
800
min
10to30
0.5
max
1.2
max
15
typ
50
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=0.7A
I
C
=0.7A, I
B
=0.14A
I
C
=0.7A, I
B
=0.14A
V
CE
=12V, I
E
=–0.3A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
t
on
t
stg
t
f
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat),V
BE
(sat)–I
C
Temperature Characteristics
(Typical)
C
C
(
B
B
(
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area
(Single Pulse)
0
0
2
1
3
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
500mA
300mA
200mA
100mA
I
B
=50mA
700mA
0.1
0.05
0.01
3
1
0.5
0
1
2
(I
C
/I
B
=5)
Collector Current I
C
(A)
V
BE
(sat)
125C (Case Temp)
25C (Case Temp)
–55C (Case Temp)
125C (Case Temp)
25C (Case Temp)
–55C (Case Temp)
V
CE
(sat)
0.1
1
0.5
2
0.1
0.5
5
7
1
S
t
o
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
on
t
f
V
CC
250V
I
C
:I
B1
:–I
B2
=10:1.5:5
0.3
1
4
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
35
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
100
500
50
1000
1
0.5
0.005
0.05
0.1
0.01
10
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
10
50
5
2
100
500
1000
0.05
0.01
0.005
1
0.5
0.1
10
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
10
μ
s
1m
5
μ
s
1m
DCT=5C
0
3
1
2
0
1.2
0.4
0.6
0.8
1.0
0.2
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
1(a ep
0.01
0.1
0.05
1
3
0.5
2
5
10
50
Collector Current I
C
(A)
D
F
(V
CE
=4V)
125C
25C
–55C
2CaTp
–CaTp
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
357
0.7
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–0.35
t
on
(
μ
s)
0.7
max
t
stg
(
μ
s)
4.0
max
t
f
(
μ
s)
0.7
max
I
(A)
0.1
V
(V)
10
External Dimensions
FM20(TO220F)
3.3
±0.2
10.1
±0.2
4
±
1
±
1
8
±
0
±
3
±
2.54
2.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c0.5
2.4
±0.2
0.45
+0.2
-0.1
B
E
C
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
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