參數(shù)資料
型號(hào): 2SB858
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管)
中文描述: 三重?cái)U(kuò)散硅進(jìn)步黨(三倍擴(kuò)散進(jìn)步黨晶體管)
文件頁數(shù): 4/5頁
文件大?。?/td> 33K
代理商: 2SB858
2SB857, 2SB858
4
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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2SB861 Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB858B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB
2SB858C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB
2SB858C-E 制造商:Renesas Electronics Corporation 功能描述:
2SB858D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB
2SB859 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors