- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370062 > 2SB858 (Hitachi,Ltd.) Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SB858 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管) |
| 中文描述： | 三重?cái)U(kuò)散硅進(jìn)步黨（三倍擴(kuò)散進(jìn)步黨晶體管） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | 2SB858 |
2SB857, 2SB858
2
Electrical Characteristics
(Ta = 25
°
C)
2SB857
2SB858
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
I
C
= –10
μ
A, I
E
= 0
Collector to base
breakdown voltage
V
(BR)CBO
–70
—
—
–70
—
—
V
Collector to emitter
breakdown voltage
V
(BR)CEO
–50
—
—
–60
—
—
V
I
C
= –50 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
—
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE1
*
—
—
–1
—
—
–1
μ
A
V
CB
= –50 V, I
E
= 0
V
CE
=
I
C
= –1 A*
DC current transfer
ratio
1
60
—
320
60
—
320
2
h
FE2
V
CE(sat)
35
—
—
35
—
—
–4 V
I
C
= –0.1 A*
2
Collector to emitter
saturation voltage
—
—
–1
—
—
–1
V
I
C
= –2 A, I
B
= –0.2 A*
2
Base to emitter voltage V
BE
Gain bandwidth product f
T
—
—
–1
—
—
–1
V
V
CE
= –4 V, I
C
= –1 A*
V
= –4 V,
I
C
= –0.5 A*
2
—
15
—
—
15
—
MHz
2
Notes: 1. The 2SB857 and 2SB858 are grouped by h
FE1
as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
0
50
100
150
Case Temperature T
C
(
°
C)
C
Maximum Collector Dissipation Curve
20
40
60
–0.05
–0.1
–0.2
–0.5
–1.0
–2
–5
Collector to emitter Voltage V
CE
(V)
C
C
–1
–2
–5
–10
–20
–50 –100
Area of Safe Operation
I
C
max
(Continuous)
(–10 V, –4 A)
DCOpeaion
T
C
= 25
°
C
(–50 V, –0.24 A)
(–20 V, –2 A)
2SB857
2SB858
(6V–1A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB859 | Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管) |
| 2SD2300 | Silicon NPN Triple Diffused |
| 2SD2300 | Power Bipolar Transistors |
| 2SB860 | Silicon PNP Triple Diffused |
| 2SB861 | Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB858B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB858C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB858C-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB858D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB859 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。