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參數(shù)資料
| 型號： | 2SB852KB |
| 英文描述： | TRANSISTOR | BJT | DARLINGTON | PNP | 32V V(BR)CEO | 300MA I(C) | SC-59 |
| 中文描述： | 晶體管|晶體管|達(dá)林頓|進(jìn)步黨| 32V的五（巴西）總裁| 300mA的一（c）|律師- 59 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SB852KB |
2SB857, 2SB858
2
Electrical Characteristics (Ta = 25°C)
2SB857
2SB858
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–70
—
–70
—
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–50
—
–60
—
V
I
C = –50 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
–5
—
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
——–1——–1
AV
CB = –50 V, IE = 0
DC current transfer ratio h
FE1*
1
60
—
320
60
—
320
V
CE =I C = –1 A*
2
h
FE2
35
—
35
—
–4 V
I
C = –0.1 A*
2
Collector to emitter
saturation voltage
V
CE(sat)
——–1——–1V
I
C = –2 A, IB = –0.2 A*
2
Base to emitter voltage
V
BE
——–1——–1V
V
CE = –4 V, IC = –1 A*
2
Gain bandwidth product f
T
—15
—
—15
—
MHz
V
CE = –4 V,
I
C = –0.5 A*
2
Notes: 1. The 2SB857 and 2SB858 are grouped by h
FE1 as follows.
2. Pulse test
BC
D
60 to 120
100 to 200
160 to 320
0
50
100
150
Case Temperature TC (°C)
Collector
power
dissipation
Pc
(W)
Maximum Collector Dissipation Curve
20
40
60
–0.05
–0.1
–0.2
–0.5
–1.0
–2
–5
Collector to emitter Voltage VCE (V)
Collector
Current
I
C
(A)
–1
–2
–5
–10
–20
–50 –100
Area of Safe Operation
IC max (Continuous)
(–10 V, –4 A)
TC = 25°C
DC
Operation
(–50 V, –0.24 A)
(–20 V, –2 A)
2SB857
2SB858
(–60
V,
–0.15
A)
相關(guān)PDF資料 |
PDF描述 |
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| 2SB856A | Dual/Triple-Voltage µP Supervisory Circuits |
| 2SB857C | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB858C | Dual/Triple-Voltage µP Supervisory Circuits |
| 2SB858D | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB859B | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB852KT146 | 制造商:ROHM Semiconductor 功能描述: |
| 2SB852KT146B | 功能描述:達(dá)林頓晶體管 DARL PNP 32V 0.3A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SB855 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-220AB -50V -2A 20W BCE |
| 2SB856 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTOR TO -50V -3A 25W BCE |
| 2SB856A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB |
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