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參數(shù)資料
| 型號： | 2SB857C |
| 英文描述： | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|進步黨| 50V五（巴西）總裁| 4A條一（c）| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SB857C |
2SB857, 2SB858
Silicon PNP Triple Diffused
ADE-208-859 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SB857
2SB858
Unit
Collector to base voltage
V
CBO
–70
V
Collector to emitter voltage
V
CEO
–50
–60
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–4
A
Collector peak current
I
C(peak)
–8
A
Collector power dissipation
P
C*
1
40
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at T
C = 25°C
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB858C | Dual/Triple-Voltage µP Supervisory Circuits |
| 2SB858D | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB859B | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB859C | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB873P | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SC-51 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB857C(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB857-C-T6CK | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
| 2SB857-C-T6CR | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
| 2SB857-C-T6CT | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
| 2SB857-C-TN3-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
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