- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄351872 > 2SB857C TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB PDF資料下載
參數(shù)資料
| 型號： | 2SB857C |
| 英文描述： | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|進步黨| 50V五（巴西）總裁| 4A條一（c）| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SB857C |
2SB857, 2SB858
3
Collector to emitter Voltage VCE (V)
Collector
Current
I
C
(A)
–2
–4
–6
–8
–10
Typical Output Characteristics
0
–1
–2
–3
–4
–5
TC = 25°C
P
c
= 40
W
IB = 0
–10 mA
–20
–30
–40
–50
–60
–70
–0.01
–0.02
–0.05
–0.1
–0.2
–0.5
–1.0
–2
–5
Base to emitter voltage VBE (V)
Collector
current
I
C
(A)
0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Typical Transfer Characteristics
VCE = –4 V
T
C
=
75
°C
25
–25
5
10
20
50
100
200
500
1,000
Collector current IC (A)
DC
current
transfer
ratio
h
FE
–0.01–0.02 –0.05–0.1 –0.2
–0.5 –1.0 –2
–4
DC Current Transfer Ratio vs.
Collector Current
VCE = –4 V
TC = 75°C
25
–25
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
Collector current IC (A)
Collector
to
emitter
saturation
voltage
V
CE
(sat)
(V)
–0.01–0.02 –0.05 –0.1 –0.2
–0.5 –1.0 –2
–5
Collector to Emitter Saturation
Voltage vs. Collector Current
TC = 75°C
25
–25
IC = 10 IB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB858C | Dual/Triple-Voltage µP Supervisory Circuits |
| 2SB858D | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB859B | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB859C | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB873P | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SC-51 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB857C(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB857-C-T6CK | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
| 2SB857-C-T6CR | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
| 2SB857-C-T6CT | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
| 2SB857-C-TN3-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。