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| 型號： | 2SB817 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 140 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-3PB, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 2SB817 |
91003TN (KT)/91098HA (KT)/90595MO (KOTO)/4017KI/6284KI, MT 8-3416/7039 No.680–1/5
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Specifications
Absolute Maximum Ratings at Ta = 25C
Features
Capable of being mounted easily because of one-point fixing type plastic molded package
(Interchangeable with TO-3).
Wide ASO because of on-chip ballast resistance.
Good depenedence of fT on current and excellent high frequency responce.
The descriptions in parentheses are for the 2SB817 only : other descriptions than those in parentheses are common to
the 2SB817 and 2SD1047.
C
Electrical Characteristics at Ta = 25C
Tc=25C
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* : The 2SB817/2SD1047 are classified by 1A hFE as follows :
Continued on next page.
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SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Ordering number : ENN680F
2SB817/2SD1047
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
140V/12A AF 60W Output Applications
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1047 | 12 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 2SD1047E | 12 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 2SD1047D | 12 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 2SB817PE | 12 A, 140 V, PNP, Si, POWER TRANSISTOR |
| 2SB824L-Q-T60-K | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB817C | 制造商:ON Semiconductor 功能描述: |
| 2SB817C-1E | 功能描述:兩極晶體管 - BJT BIP PNP 12A 140V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB817D | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:TRANSISTOR | BJT | PNP | 140V V(BR)CEO | 12A I(C) | TO-247VAR |
| 2SB817E | 制造商:Taitron Components Inc 功能描述: |
| 2SB817F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 140V V(BR)CEO | 12A I(C) | SOT-186VAR |
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