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參數(shù)資料
| 型號(hào)： | 2SB817PE |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 12 A, 140 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-3B, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 30K |
| 代理商： | 2SB817PE |
2SB817P / 2SD1047P
No.6572-1/4
Features
Capable of being mounted easily because of one-
point fixing type plastic molded package (Inter-
changeable with TO-3).
Wide ASO because of built-in ballast resistance.
Goode dependence of fT on current and good HF
characteristic.
Specifications
( ) : 2SB817P
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(
)160
V
Collector-to-Emitter Voltage
VCEO
(
)140
V
Emitter-to-Base Voltage
VEBO
(
)6
V
Collector Current
IC
(
)12
A
Collector Current (Pulse)
ICP
(
)15
A
Collector Dissipation
PC
Tc=25
°C
120
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
40 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)80V, IE=0
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)0.1
mA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6572
Package Dimensions
unit : mm
2022A
[2SB817P / 2SD1047P]
82200 TS IM TA-3036
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
15.6
2.6
3.5
1.2
14.0
1.6
1.0
2.0
0.6
20.0
15.0
1.3
3.2
4.8
2.0
0.6
5.45
1.4
1
2
3
2SB817P : PNP Epitaxial Planar Silicon Transistor
2SD1047P : NPN Triple Diffused Planar Silicon Transistor
2SB817P / 2SD1047P
140V / 12A, AF80W Output Applications
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB824L-Q-T60-K | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB824G-R-T60-K | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB824L-R-AB3-R | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB824G-Q-AB3-R | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB824G-S-T60-K | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB817P-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTORPNP140V12ATO-247 |
| 2SB819 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type(For low-frequency output amplification) |
| 2SB819Q | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | SC-71 |
| 2SB819R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | SC-71 |
| 2SB821 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 300MA I(C) | SIP |
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