參數(shù)資料
型號: 2SB566A
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Triple Diffused
中文描述: 三重擴散硅進步黨
文件頁數(shù): 3/6頁
文件大?。?/td> 33K
代理商: 2SB566A
2SB566(K), 2SB566A(K)
3
60
40
20
0
50
100
150
C
C
Case temperature T
C
(
°
C)
Maximum Collector Dissipation Curve
–10
–1
C
C
–5
–2
–1.0
–0.5
–0.2
–0.1
–2
–10
–5
–20
–50 –100
(–60 V, –0.15 A)
2SB566A K
I
C
max (Continuous)
DCOpeaion
T
C
= 25
°
C
(–50 V, –0.22 A)
2SB566 K
Area Safe Operation
Collector to emitter voltage V
CE
(V)
0
C
C
–5
–4
–3
–2
–1
T
C
= 25
°
C
–2
–4
–6
–8
–10
I
B
= 0
–10 mA
–20
–30
–40
–50
–60
–70
Typical Output Characteristics
Collector to emitter voltage V
CE
(V)
0
C
C
–5
V
CE
= –4 V
–2
–1.0
–0.2
–0.1
–0.05
–0.02
–0.01
–0.5
–0.4
–0.8
–1.2 –1.4
–1.0
–0.6
–0.2
T
C
°
C
2
Typical Transfer Characteristics
Base to emitter voltage V
BE
(V)
相關(guān)PDF資料
PDF描述
2SB566AK Silicon PNP Triple Diffused
2SB566K Silicon PNP Triple Diffused
2SB566 Power Bipolar Transistors
2SB566A Power Bipolar Transistors
2SB632 PNP Epitaxial Planar Silicon Transistor for 25V/35V, 2A Low-Frequency Power Amplifier Applications(用于25V/35V,2A低頻功率放大器應(yīng)用的PNP硅外延平面型晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB566A(K)B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB
2SB566A(K)C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB
2SB566AB(K) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SB566AC(K) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SB566AK 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Triple Diffused