參數(shù)資料
型號: 2SB566
廠商: Electronic Theatre Controls, Inc.
英文描述: Power Bipolar Transistors
中文描述: 功率雙極晶體管
文件頁數(shù): 2/6頁
文件大?。?/td> 33K
代理商: 2SB566
2SB566(K), 2SB566A(K)
2
Electrical Characteristics
(Ta = 25°C)
2SB566(K)
2SB566A(K)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–70
–70
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–50
–60
V
I
C
= –50 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
–5
–5
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
–1
–1
μ
A
V
CB
= –50 V, I
E
= 0
V
CE
= –4 V, I
C
= –1 A
V
CE
= –4 V, I
C
= –0.1 A
I
C
= –2 A, I
B
= –0.2 A
DC current tarnsfer ratio h
FE1
*
1
60
200
60
200
h
FE2
V
CE(sat)
35
35
Collector to emitter
saturation voltage
–1.0
–1.0
V
Base to emitter
saturation voltage
V
BE(sat)
–1.2
–1.2
V
I
C
= –2 A, I
B
= –0.2 A
Gain bandwidth product f
T
Turn on time
15
15
MHz
V
CE
= –4 V, I
C
= –0.5 A
V
CC
= –10.5 V
I
C
= 10I
B1
= –10I
B2
=
–0.5 A
t
on
t
off
t
stg
0.3
0.3
μ
s
μ
s
μ
s
Turn off time
3.0
3.0
Storage time
Note:
2.5
2.5
1. The 2SB566(K) and 2SB566A(K) are grouped by h
FE1
as follows.
B
C
60 to 120
100 to 200
相關(guān)PDF資料
PDF描述
2SB566A Power Bipolar Transistors
2SB632 PNP Epitaxial Planar Silicon Transistor for 25V/35V, 2A Low-Frequency Power Amplifier Applications(用于25V/35V,2A低頻功率放大器應(yīng)用的PNP硅外延平面型晶體管)
2SB646 LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A
2SB646A LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A
2SB648 Silicon PNP Epitaxial(外延PNP晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB566(K)B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB
2SB566(K)C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB
2SB566A 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors
2SB566A(K)B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB