參數(shù)資料
型號: 2SB562
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial
中文描述: 硅外延進步黨
文件頁數(shù): 2/6頁
文件大?。?/td> 30K
代理商: 2SB562
2SB562
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
Tj
–25
V
Collector to emitter voltage
–20
V
Emitter to base voltage
–5
V
Collector current
–1.0
A
Collector peak current
–1.5
A
Collector power dissipation
0.9
W
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–25
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–20
V
I
C
= –1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
–5
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE
*
1
–1.0
μ
A
V
CB
= –20 V, I
E
= 0
V
CE
= –2 V,
I
C
= –0.5 A (Pulse test)
I
C
= –0.8 A,
I
B
= –0.08 A (Pulse test)
V
CE
= –2 V,
I
C
= –0.5 A (Pulse test)
V
CE
= –2 V,
I
C
= –0.5 A (Pulse test)
V
= –10 V, I
E
= 0
f = 1 MHz
DC current transfer ratio
85
240
Collector to emitter saturation
voltage
V
CE(sat)
–0.2
–0.5
V
Base to emitter voltage
V
BE
–0.8
–1.0
V
Gain bandwidth product
f
T
350
MHz
Collector output capacitance
Cob
38
pF
Note:
B
1. The 2SB562 is grouped by h
FE
as follows.
C
85 to 170
120 to 240
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參數(shù)描述
2SB562B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-92VAR
2SB562BTZ-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SB562C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-92VAR
2SB562CTZ-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SB563 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors