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參數(shù)資料
| 型號： | 2SB1175 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type |
| 中文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, I-G1, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 95K |
| 代理商： | 2SB1175 |
2SB1175
2
SJD00051AED
V
BE(sat)
I
C
h
FE
I
C
f
T
I
C
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
C
ob
V
CB
t
on
,
t
stg
,
t
f
I
C
Safe operation area
0
0
160
40
120
80
5
15
10
20
(1)T
C
=Ta
(2)Without heat sink
(P
C
=1.3W)
(1)
(2)
C
C
Ambient temperature T
a
(
°
C)
0
6
5
4
3
2
1
0
10
2
4
8
6
C
C
Collector-emitter voltage V
CE
(V)
T
C
=25C
–8–70mA
–90mA
–60mA
–40mA
–50mA
–30mA
–20mA
–8mA
–5mA
I
B
=–100mA
0.01
0.01
0.1
1
10
100
0.1
1
10
C
C
Collector current I
C
(A)
I
C
/I
B
=20
25C
T
C
=100C
–25C
0.01
0.01
0.1
1
10
100
0.1
1
10
I
C
/I
B
=20
T
C
=–25C
25C
100C
B
B
Collector current I
C
(A)
0.01
0.1
1
10
1
10
10
2
10
4
10
3
F
F
Collector current I
C
(A)
V
CE
=–2V
T
C
=100C
25C
–25C
0.01
0.1
1
10
1
10
10
2
10
4
10
3
T
T
Collector current I
C
(A)
V
CE
=–10V
f=10MHz
T
C
=25C
0.1
1
10
100
1
10
10
2
10
4
10
3
C
o
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25C
0
3.2
0.8
Collector current I
C
(A)
2.4
1.6
0.01
0.1
1
10
100
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(–I
B1
=I
B2
)
V
CC
=–50V
T
C
=25C
T
o
s
f
μ
s
0.01
1
0.1
1
10
100
10
100
1
000
Non repetitive pulse
T
C
=25C
t=10ms
t=300ms
t=1ms
I
CP
I
C
C
C
Collector-emitter voltage V
CE
(V)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB1176 | Silicon PNP epitaxial planar type |
| 2SB1179 | For Power Amplification And Switching |
| 2SB1179A | For Power Amplification And Switching |
| 2SB1179 | Power Amplifier,Switching Complementary Pair with 2SD1749, 2SD1749A |
| 2SB1179A | Power Amplifier,Switching Complementary Pair with 2SD1749, 2SD1749A |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1175P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1175Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1175R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1176 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon PNP Epitaxial Planar Type |
| 2SB1176P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-221VAR |
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