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參數(shù)資料
| 型號： | 2SB1175 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type |
| 中文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, I-G1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 95K |
| 代理商： | 2SB1175 |
Power Transistors
2SB1175
Silicon PNP epitaxial planar type
1
Publication date: March 2003
SJD00051AED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
CBO
I
C
=
10 mA, I
B
=
0
V
CB
=
100 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
2 V, I
C
=
0.1 A
V
CE
=
2 V, I
C
=
1 A
I
C
=
3 A, I
B
=
0.15 A
I
C
=
3 A, I
B
=
0.15 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
10 MHz
80
V
Collector-base cutoff current (Emitter open)
10
50
μ
A
μ
A
Emitter-base cutoff current (Collector open)
I
EBO
Forward current transfer ratio
h
FE1
h
FE2
*
45
90
260
Collector-emitter saturation voltage
V
CE(sat)
0.5
1.5
V
Base-emitter saturation voltage
V
BE(sat)
f
T
V
Transition frequency
30
MHz
Turn-on time
t
on
I
C
=
1 A, I
B1
=
0.1 A, I
B2
=
0.1 A
V
CC
=
50 V
0.15
μ
s
μ
s
μ
s
Storage time
t
stg
t
f
0.8
Fall time
0.15
For voltage switching
Complementary to 2SD1745
■
Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
130
80
7
4
8
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
V
Emitter-base voltage (Collector open)
V
Collector current
I
C
A
Peak collector current
I
CP
P
C
A
Collector power dissipation
15
W
T
a
=
25
°
C
1.3
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Rank
Q
P
h
FE2
90 to 180
130 to 260
7.0
±
0.3
3.5
±
0.2
0 to 0.15
1
±
0
7
±
0
2
±
0
2
±
0
(
(
1
±
0
3.0
±
0.2
2.0
±
0.2
1.1
±
0.1
0.75
±
0.1
0.9
±
0.1
0 to 0.15
0.4
±
0.1
2.3
±
0.2
4.6
±
0.4
1
2
3
Unit: mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1175P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1175Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1175R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1176 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon PNP Epitaxial Planar Type |
| 2SB1176P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-221VAR |
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