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參數(shù)資料
| 型號(hào)： | 2SB1179A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Power Amplifier,Switching Complementary Pair with 2SD1749, 2SD1749A |
| 中文描述： | 功率放大器，開關(guān)與2SD1749，2SD1749A互補(bǔ)對(duì) |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 2SB1179A |
Power Transistors
2SB1179, 2SB1179A
Silicon PNP epitaxial planar type darlington
1
Publication date: February 2003
SJD00055AED
Parameter
Symbol
Conditions
Min
60
80
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SB1179
V
CEO
I
C
=
30 mA, I
B
=
0
V
2SB1179A
Base-emitter voltage
V
BE
I
CBO
V
CE
=
3 V, I
C
=
3 A
V
CB
=
60 V, I
E
=
0
V
CB
=
80 V, I
E
=
0
V
CE
=
40 V, I
B
=
0
V
CE
=
40 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
3 V, I
C
=
0.5 A
V
CE
=
3 V, I
C
=
3 A
I
C
=
3 A, I
B
=
12 mA
I
C
=
5 A, I
B
=
20 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
3 A, I
B1
=
12 mA, I
B2
=
12 mA
V
CC
=
50 V
2.5
200
200
500
500
2
V
μ
A
Collector-base cutoff
current (Emitter open)
2SB1179
2SB1179A
Collector-emitter cutoff
current (Base open)
2SB1179
I
CEO
μ
A
2SB1179A
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1
h
FE2
*
V
CE(sat)
mA
Forward current transfer ratio
1
000
2
000
10
000
2
4
Collector-emitter saturation voltage
V
Transition frequency
f
T
t
on
t
stg
t
f
20
MHz
μ
s
μ
s
μ
s
Turn-on time
0.3
Storage time
2.0
Fall time
0.5
For power amplification and switching
Complementary to 2SD1749, 2SD1749A
■
Features
High forward current transfer ratio h
FE
which has satisfactory linearity
High-speed switching
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
Q
Parameter
Symbol
Rating
60
80
60
80
5
4
8
15
Unit
Collector-base voltage
(Emitter open)
2SB1179
V
CBO
V
2SB1179A
Collector-emitter voltage
(Base open)
2SB1179
V
CEO
V
2SB1179A
Emitter-base voltage (Collector open)
V
EBO
I
C
I
CP
P
C
V
Collector current
A
Peak collector current
A
Collector power dissipation
W
T
a
=
25
°
C
1.3
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
7.0
±
0.3
3.5
±
0.2
0 to 0.15
1
±
0
7
±
0
2
±
0
2
±
0
(
(
1
±
0
3.0
±
0.2
2.0
±
0.2
1.1
±
0.1
0.75
±
0.1
0.9
±
0.1
0 to 0.15
0.4
±
0.1
2.3
±
0.2
4.6
±
0.4
1
2
3
Unit: mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
B
C
E
P
h
FE2
2
000 to 5
000 4
000 to 10
000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1180 | Silicon PNP epitaxial planar type darlington |
| 2SB1180A | Silicon PNP epitaxial planar type darlington |
| 2SB1193 | For Midium-Speed Power Switching |
| 2SB1197 | PNP Silicon Epitaxial Transistors |
| 2SB1197-P | PNP Silicon Epitaxial Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1179AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1179AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1179AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1179P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1179Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 4A I(C) | TO-221VAR |
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