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參數(shù)資料
| 型號： | 2SA2126 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications |
| 中文描述： | 進(jìn)步黨硅外延平面晶體管直流/直流轉(zhuǎn)換器應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SA2126 |
2SA2126
No.7990-1/4
Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers.
Features
Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
Conditions
Ratings
Unit
V
V
V
V
A
A
mA
W
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
--50
--50
--50
--6
--3
--6
--600
0.8
15
150
Collector Dissipation
PC
Tc=25
°
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE
fT
Cob
VCB=--40V, IE=0
VEB=--4V, IC=0
VCE=--2V, IC=--100mA
VCE=--10V, IC=--500mA
VCB=--10V, f=1MHz
--1
--1
μ
A
μ
A
200
560
390
24
MHz
pF
Continued on next page.
Ordering number : ENN7990
21505EA TS IM TB-00000214
2SA2126
PNP Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA2126-E | 功能描述:兩極晶體管 - BJT HIGH-CURRENT SWITCHING RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2126-H | 功能描述:兩極晶體管 - BJT BIP PNP 3A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2126-S-TL-E | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2126-TL-E | 功能描述:兩極晶體管 - BJT HIGH-CURRENT SWITCHING RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2126-TL-H | 功能描述:兩極晶體管 - BJT BIP PNP 3A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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