參數(shù)資料
型號: 2SA1615-ZL
廠商: NEC Corp.
英文描述: 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
中文描述: 5個引腳µ帶看門狗和手動復(fù)位的P監(jiān)控電路
文件頁數(shù): 2/6頁
文件大?。?/td> 118K
代理商: 2SA1615-ZL
Data Sheet D16119EJ1V0DS
2
2SA1615, 1615-Z
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
20 V, I
E
= 0
1.0
μ
A
Emitter cutoff current
I
EBO
V
EB
=
8.0 V, I
C
= 0
1.0
μ
A
DC current gain
h
FE1
*
V
CE
=
2.0 V, I
C
=
0.5 A
200
600
DC current gain
h
FE2
*
V
CE
=
2.0 V, I
C
=
4.0 A
160
Collector saturation voltage
V
CE(sat)
*
I
C
=
4.0 A, I
B
=
0.05 A
0.2
0.25
V
Base saturation voltage
V
BE(sat)
*
I
C
=
4.0 A, I
B
=
0.05 A
0.9
1.2
V
Gain bandwidth product
f
T
V
CE
=
5.0 V, I
E
= 1.5 A
180
MHz
Output capacity
C
ob
V
CB
=
10 V, I
E
= 0, f = 1.0 MHz
220
pF
Turn-on time
t
on
80
ns
Storage time
t
stg
300
ns
Fall time
t
f
I
C
=
5.0 A, I
B1
=
I
B2
= 0.125 A,
R
L
= 2.0
, V
CC
10 V
60
ns
* Pulse test PW
350
μ
s, duty cycle
2%
h
FE
CLASSIFICATION
Marking
L
K
h
FE2
200 to 400
300 to 600
PACKAGE DRAWING (UNIT: mm)
2SA1615
2SA1615-Z
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Collector (fin)
相關(guān)PDF資料
PDF描述
2SA1615 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SA1615-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SA1617 Silicon PNP Epitaxial
2SA1624 PNP EPITAXIAL PLANAR SILICON TRANSISTOR
2SA1641 PNP Epitaxial Planar Silicon Transistors for High-Current Switching Applications(用于大電流轉(zhuǎn)換應(yīng)用的PNP硅外延平面型晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1615-ZT1L 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SA1617 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-59-55V -.1A .15W EBC
2SA1618 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SA1618-GR 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1618-GR(TE85L,F 功能描述:兩極晶體管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2