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參數(shù)資料
| 型號： | 2SA1160C |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 150K |
| 代理商： | 2SA1160C |
2SJ439
2005-03-04
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±6.5 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 16 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
16
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.5
—
1.1
V
VGS = 2.5 V, ID = 2.5 A
—
0.18
0.28
Drainsource ON-resistance
RDS (ON)
VGS = 4 V, ID = 2.5 A
—
0.14
0.2
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
3.0
6.0
—
S
Input capacitance
Ciss
—
1050
—
Reverse transfer capacitance
Crss
—
120
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
460
—
pF
Rise time
tr
—
80
—
Turnon time
ton
—
100
—
Fall time
tf
—
250
—
Switching time
Turnoff time
toff
—
550
—
ns
Total gate charge
(Gatesource plus gatedrain)
Qg
—
24
—
Gatesource charge
Qgs
—
16
—
Gatedrain (“Miller”) charge
Qgd
VDD ≈ 16 V, VGS = 5 V, ID = 5 A
—
8
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
120
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V,dlDR / dt = 50 A / s
—
0.12
—
C
Marking
J439
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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