參數(shù)資料
型號(hào): 2SA1160C
元件分類: 小信號(hào)晶體管
英文描述: 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 150K
代理商: 2SA1160C
2SA1160
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1160
Strobe Flash Applications
Medium Power Amplifier Applications
High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 A)
Low saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
6
V
DC
IC
2
Collector current
Pulsed (Note 1)
ICP
4
A
Base current
IB
2
A
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Pulse width
= 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
相關(guān)PDF資料
PDF描述
2SA1160B 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1160A 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1162-O 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SA1162-Y 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SA1162GRTE85L 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
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