參數(shù)資料
型號: 2SA1084
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial
中文描述: 硅外延進步黨
文件頁數(shù): 8/8頁
文件大小: 41K
代理商: 2SA1084
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contact Hitachi’s sales office before using the product in an application that demands especially high
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failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
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: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
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Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
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參數(shù)描述
2SA1084D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 100MA I(C) | TO-92
2SA1084E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 100MA I(C) | TO-92
2SA1084ETZ 功能描述:TRANSISTOR PNP 90V 100MA TO-92 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SA1084ETZ-E 功能描述:TRANSISTOR PNP 90V 100MA TO-92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SA1085 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial