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參數(shù)資料
| 型號： | 2N7608T2 |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 100 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | HERMETIC SEALED, MODIFIED TO-39, 3 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 209K |
| 代理商： | 2N7608T2 |
IRHLF77110, 2N7608T2
Pre-Irradiation
6
www.irf.com
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
Fig 12. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
TC , Case Temperature (°C)
0
1
2
3
4
5
6
I D
,
D
ra
in
C
ur
re
nt
(A
)
1
10
100
VDS, Drain-to-Source Voltage (V)
0
200
400
600
800
1000
1200
1400
1600
C
,C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V,
f = 1 MHz
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
02468
10 12 14 16 18 20
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(V
)
VDS = 80V
VDS = 50V
VDS = 20V
ID = 6.0A
FOR TEST CIRCUIT
SEE FIGURE 17
0
0.5
1.0
1.5
2.0
2.5
VSD , Source-to-Drain Voltage (V)
0.1
1
10
100
I S
D
,
R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
VGS = 0V
TJ = 150°C
TJ = 25°C
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