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參數(shù)資料
| 型號(hào)： | 2N7608T2 |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 100 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | HERMETIC SEALED, MODIFIED TO-39, 3 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 209K |
| 代理商： | 2N7608T2 |
www.irf.com
3
Pre-Irradiation
IRHLF77110, 2N7608T2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Fig a. Single Event Effect, Safe Operating Area
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 300K Rads(Si)1
Units
Test Conditions
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
100
—
V
VGS = 0V, ID = 250A
VGS(th)
Gate Threshold Voltage
1.0
2.0
VGS = VDS, ID = 250A
IGSS
Gate-to-Source Leakage Forward
—
100
nA
VGS = 10V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -10V
IDSS
Zero Gate Voltage Drain Current
—
1.0
A
VDS= 80V, VGS= 0V
RDS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
—
0.32
VGS = 4.5V, ID = 3.7A
VSD
Diode Forward Voltage
—
1.2
V
VGS = 0V, ID = 6.0A
1. Part numbers IRHLF77110, IRHLF73110
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm
2))
(MeV)
(m)
@VGS=
0V
-2V
-4V
-5V
-6V
-7V
38 ± 5%
300 ± 7.5%
38 ± 7.5%
100
62 ± 5%
355 ± 7.5%
33 ± 7.5%
100
-
85 ± 5%
380 ± 10%
29 ± 7.5%
100
-
0
20
40
60
80
100
120
-7
-6
-5
-4
-3
-2
-1
0
VGS
VD
S
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
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