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參數(shù)資料
| 型號(hào)： | 2N7608T2 |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 100 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | HERMETIC SEALED, MODIFIED TO-39, 3 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 209K |
| 代理商： | 2N7608T2 |
www.irf.com
5
Pre-Irradiation
IRHLF77110, 2N7608T2
Fig 8. Typical Threshold Voltage Vs
Temperature
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Temperature ( °C )
100
110
120
130
V
(B
R
)D
S
,D
ra
in
-t
o-
S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
(V
)
ID = 1.0mA
0
4
8
12
16
20
ID, Drain Current (A)
0
0.2
0.4
0.6
0.8
1.0
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
)
TJ = 25°C
TJ = 150°C
Vgs = 4.5V
Fig 6. Typical On-Resistance Vs
DrainCurrent
Fig 5. Typical On-Resistance Vs
Gate Voltage
2
4
6
8
10
12
VGS, Gate -to -Source Voltage (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
)
ID = 6.0A
TJ = 25°C
TJ = 150°C
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
V
G
S
(t
h)
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(V
)
ID = 50A
ID = 250A
ID = 1.0mA
ID = 150mA
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