參數(shù)資料
型號： 2N7002BKM
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 60 V, 450 mA N-channel Trench MOSFET
中文描述： 450 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN
文件頁數(shù)： 6/16頁
文件大?。?/td> 329K
代理商： 2N7002BKM
2N7002BKM
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 25 October 2010
6 of 16
NXP Semiconductors
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
7. Characteristics
Table 7.
T
j
= 25
°
C unless otherwise specified.
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
gate-source threshold
voltage
I
DSS
drain leakage current
[1]
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.01.
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 10
μ
A; V
GS
= 0 V
60
-
-
V
I
D
= 250
μ
A; V
DS
= V
GS
1.1
1.6
2.1
V
V
DS
= 60 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
=
±
20 V; V
DS
= 0 V
-
-
-
-
-
-
1
10
10
μ
A
μ
A
μ
A
I
GSS
R
DSon
gate leakage current
drain-source on-state
resistance
[1]
V
GS
= 5 V; I
D
= 50 mA
V
GS
= 10 V; I
D
= 500 mA
V
DS
= 10 V; I
D
= 200 mA
-
-
1.3
1
550
2
1.6
-
Ω
Ω
mS
g
fs
forward
transconductance
[1]
-
Dynamic characteristics
Q
G(tot)
total gate charge
Q
GS
gate-source charge
Q
GD
gate-drain charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer
capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain voltage
I
D
= 300 mA;
V
DS
= 30 V;
V
GS
= 4.5 V
-
0.5
0.6
nC
-
-
-
-
-
0.2
0.1
33
7
4
-
-
50
-
-
nC
nC
pF
pF
pF
V
GS
= 0 V; V
DS
= 10 V;
f = 1 MHz
V
DS
= 50 V;
R
L
= 250
Ω
;
V
GS
= 10 V;
R
G
= 6
Ω
-
-
-
-
5
6
12
7
10
-
24
-
ns
ns
ns
ns
I
S
= 115 mA; V
GS
= 0 V
0.47
0.75
1.1
V
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相關代理商/技術參數(shù)
參數(shù)描述
2N7002BKM,315 功能描述:MOSFET Single N-Channel 60V 300mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002BKMB 制造商:NXP Semiconductors 功能描述:MOSFET, N-CH, 60V, 450MA, SOT883B 制造商:NXP Semiconductors 功能描述:MOSFET, N-CH, 60V, 450MA, SOT883B; Transistor Polarity:N Channel; Continuous Drain Current Id:450mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V ;RoHS Compliant: Yes
2N7002BKMB,315 功能描述:MOSFET N-Chan 60V 450mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002BKMB315 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述:
2N7002BKS 制造商:NXP Semiconductors 功能描述:MOSFET NN CH 60V 0.3A SOT363 制造商:NXP Semiconductors 功能描述:MOSFET, NN CH, 60V, 0.3A, SOT363 制造商:NXP Semiconductors 功能描述:MOSFET, NN CH, 60V, 0.3A, SOT363; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; No. of Pins:6;RoHS Compliant: Yes
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