參數(shù)資料
型號(hào)： 2N7002BKM
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 60 V, 450 mA N-channel Trench MOSFET
中文描述： 450 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN
文件頁(yè)數(shù)： 3/16頁(yè)
文件大?。?/td> 329K
代理商： 2N7002BKM
2N7002BKM
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 25 October 2010
3 of 16
NXP Semiconductors
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Measured between all pins.
P
tot
total power dissipation
T
amb
= 25
°
C
[2]
-
360
715
2700
150
+150
+150
mW
mW
mW
°
C
°
C
°
C
[1]
-
T
sp
= 25
°
C
-
T
j
T
amb
T
stg
Source-drain diode
I
S
ESD maximum rating
V
ESD
electrostatic discharge
voltage
junction temperature
ambient temperature
storage temperature
55
65
source current
T
amb
= 25
°
C
[1]
-
450
mA
human body model
[3]
-
2000
V
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Limiting values
…continued
Conditions
Min
Max
Unit
Fig 1.
Normalized total power dissipation as a
function of ambient temperature
Fig 2.
Normalized continuous drain current as a
function of ambient temperature
T
amb
(
°
C)
75
175
125
25
75
25
017aaa001
40
80
120
P
der
(%)
0
T
amb
(
°
C)
75
175
125
25
75
25
017aaa002
40
80
120
I
der
(%)
0
P
der
P
P
tot 25
°
C
)
-----------------------
100
%
×
=
I
der
I
I
D 25
°
C
)
-------------------
100
%
×
=
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N7002BKM,315 功能描述:MOSFET Single N-Channel 60V 300mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002BKMB 制造商:NXP Semiconductors 功能描述:MOSFET, N-CH, 60V, 450MA, SOT883B 制造商:NXP Semiconductors 功能描述:MOSFET, N-CH, 60V, 450MA, SOT883B; Transistor Polarity:N Channel; Continuous Drain Current Id:450mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V ;RoHS Compliant: Yes
2N7002BKMB,315 功能描述:MOSFET N-Chan 60V 450mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002BKMB315 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述:
2N7002BKS 制造商:NXP Semiconductors 功能描述:MOSFET NN CH 60V 0.3A SOT363 制造商:NXP Semiconductors 功能描述:MOSFET, NN CH, 60V, 0.3A, SOT363 制造商:NXP Semiconductors 功能描述:MOSFET, NN CH, 60V, 0.3A, SOT363; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; No. of Pins:6;RoHS Compliant: Yes
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