參數(shù)資料
型號: 2N7002
廠商: GE Security, Inc.
英文描述: DMOS Transistors (N-Channel)(DMOS晶體管(N通道))
中文描述: DMOS晶體管(N溝道)(的DMOS晶體管(不適用通道))
文件頁數(shù): 2/5頁
文件大?。?/td> 243K
代理商: 2N7002
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
2N7002
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
at I
D
= 100
μ
A, V
GS
= 0
V
(BR)DSS
60
90
V
Gate Threshold Voltage
at V
GS
= V
DS
, I
D
= 1 mA
V
GS(th)
2
2.5
V
Gate-Body Leakage Current
at V
GS
= 15 V, V
DS
= 0
I
GSS
10
nA
Drain Cutoff Current at V
DS
= 25 V, V
GS
= 0
I
DSS
0.5
μ
A
Drain-Source ON Resistance
at V
GS
= 10 V, I
D
= 500 mA
r
DS(ON)
5
7.5
Thermal Resistance Junction to Substrate
Backside
R
thSB
320
1)
K/W
Thermal Resistance Junction to Ambient Air
R
thJA
450
1)
K/W
Forward Transconductance
at V
DS
= 10 V, I
D
= 200 mA, f = 1 MHz
g
m
200
mS
Input Capacitance
at V
DS
= 10 V, V
GS
= 0, f = 1 MHz
C
iss
60
pF
Switching Times
at V
GS
= 10 V, V
DS
= 10 V, R
D
= 100
Turn-On Time
Turn-Off Time
t
on
t
off
5
25
ns
ns
1)
Device on fiberglass substrate, see layout
Layout for R
thJ A
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)
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