參數(shù)資料
型號(hào): 2N7002
廠商: GE Security, Inc.
英文描述: DMOS Transistors (N-Channel)(DMOS晶體管(N通道))
中文描述: DMOS晶體管(N溝道)(的DMOS晶體管(不適用通道))
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 243K
代理商: 2N7002
FEATURES
DMOS Transistors (N-Channel)
Dimensions in inches and (millimeters)
.016 (0.4)
)
.037(0.95).037(0.95)
m
.122 (3.1)
.118 (3.0)
.016 (0.4)
.016 (0.4)
3
1
2
Top View
.102 (2.6)
.094 (2.4)
.
.
)
.
.
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Marking
S72
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
SOT-23
4/98
2N7002
Inverse Diode
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
60
V
Drain-Gate Voltage
V
DGS
60
V
Gate-Source-Voltage (pulsed)
V
GS
±20
V
Drain Current (continuous)
I
D
250
mA
Power Dissipation at T
C
= 50 °C
P
tot
0.310
1)
W
Junction Temperature
T
j
150
°C
Storage Temperature Range
T
S
–55 to +150
°C
1)
Ceramic Substrate 0.7mm; 2.5 cm
2
area.
Symbol
Value
Unit
Max. Forward Current (continuous)
at T
amb
= 25 °C
I
F
0.3
A
Forward Voltage Drop (typ.)
at V
GS
= 0, I
F
= 0.3 A, T
j
= 25 °C
V
F
0.85
V
High input impedance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
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