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參數資料
| 型號： | 2N7002/T1 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 8/11頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 2N7002/T1 |
2N7002_6
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 28 April 2006
6 of 11
Philips Semiconductors
2N7002
N-channel TrenchMOS FET
Tj =25 °CTj =25 °C
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6.
Drain-source on-state resistance as a function
of drain current; typical values
Tj =25 °C and 150 °C; VDS >ID × RDSon
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature
003aab352
0
0.2
0.4
0.6
0.8
1
012
34
VDS (V)
ID
(A)
10
5
4.5
4
3.5
VGS (V) =
003aab353
0
2000
4000
6000
8000
10000
0
0.2
0.4
0.6
0.8
1
ID (A)
RDSon
(m
)
4
5
4.5
10
VGS (V) =
003aab354
0
0.2
0.4
0.6
0.8
1
0246
VGS (V)
ID
(A)
Tj = 150 °C
25
°C
03aa28
0
0.6
1.2
1.8
2.4
-60
0
60
120
180
Tj (°C)
a
a
R
DSon
R
DSon 25 C
°
()
------------------------------
=
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N7002-T1-E3 | 功能描述:MOSFET 60V 0.115A 0.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET N TO-236 |
| 2N7002-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| 2N7002-T1-ER | 制造商:Vishay Intertechnologies 功能描述:SOT23 NCH MOSFET 60V 7.5R |
| 2N7002-T1-GE3 | 功能描述:MOSFET 60V 115mA 0.2W 7.5ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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