參數(shù)資料
型號(hào)： 2N7002/T1
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 7/11頁(yè)
文件大?。?/td> 87K
代理商： 2N7002/T1
2N7002_6
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 28 April 2006
5 of 11
Philips Semiconductors
2N7002
N-channel TrenchMOS FET
6.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage
ID =10 A; VGS =0V
Tj =25 °C
60
--V
Tj = 55 °C
55
--V
VGS(th)
gate-source threshold voltage
ID = 0.25 mA; VDS =VGS; see Figure 9 and 10
Tj =25 °C
1
2
2.5
V
Tj = 150 °C
0.6
-
V
Tj = 55 °C
-
2.75
V
IDSS
drain leakage current
VDS =48V; VGS =0V
Tj =25 °C
-
0.01
1
A
Tj = 150 °C
--10
A
IGSS
gate leakage current
VGS = ±15 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 500 mA; see Figure 6 and 8
Tj =25 °C
-
2.8
5
Tj = 150 °C
-
9.25
VGS = 4.5 V; ID = 75 mA; see Figure 6 and 8
-
3.8
5.3
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS = 10 V; f = 1 MHz;
-
3150pF
Coss
output capacitance
-
6.8
30
pF
Crss
reverse transfer capacitance
-
3.5
10
pF
ton
turn-on time
VDS =50V; RL = 250 ; VGS =10V;
RG =50 ; RGS =50
-
2.5
10
ns
toff
turn-off time
-
11
15
ns
Source-drain diode
VSD
source-drain voltage
IS = 300 mA; VGS = 0 V; see Figure 11
-
0.85
1.5
V
trr
reverse recovery time
IS = 300 mA; dIS/dt = 100 A/s; VGS =0V
-
30
-
ns
Qr
recovered charge
-
30
-
nC
相關(guān)PDF資料
PDF描述
2N7002K 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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2N7002/T3 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7002-T 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N7002-T1-E3 功能描述:MOSFET 60V 0.115A 0.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET N TO-236
2N7002-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
2N7002-T1-ER 制造商:Vishay Intertechnologies 功能描述:SOT23 NCH MOSFET 60V 7.5R
2N7002-T1-GE3 功能描述:MOSFET 60V 115mA 0.2W 7.5ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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