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參數(shù)資料
| 型號： | 2N7000RLRAG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS |
| 中文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | LEAD FREE, CASE 29-11, TO-226, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 2N7000RLRAG |
2N7000
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(V
GS
= 0, I
D
= 10 Adc)
V
(BR)DSS
60
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 48 Vdc, V
GS
= 0)
(V
DS
= 48 Vdc, V
GS
= 0, T
J
= 125
°
C)
I
DSS
1.0
1.0
Adc
mAdc
GateBody Leakage Current, Forward
(V
GSF
= 15 Vdc, V
DS
= 0)
I
GSSF
10
nAdc
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
V
GS(th)
0.8
3.0
Vdc
Static DrainSource OnResistance
(V
GS
= 10 Vdc, I
D
= 0.5 Adc)
(V
GS
= 4.5 Vdc, I
D
= 75 mAdc)
r
DS(on)
5.0
6.0
DrainSource OnVoltage
(V
GS
= 10 Vdc, I
D
= 0.5 Adc)
(V
GS
= 4.5 Vdc, I
D
= 75 mAdc)
V
DS(on)
2.5
0.45
Vdc
OnState Drain Current
(V
GS
= 4.5 Vdc, V
DS
= 10 Vdc)
I
d(on)
75
mAdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 200 mAdc)
g
fs
100
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 V, V
= 0,
f = 1.0 MHz)
C
iss
60
pF
Output Capacitance
C
oss
25
Reverse Transfer Capacitance
C
rss
5.0
SWITCHING CHARACTERISTICS
(Note 1)
TurnOn Delay Time
(V
DD
= 15 V, I
D
= 500 mA,
R
G
= 25 , R
L
= 30 , V
gen
= 10 V)
t
on
10
ns
TurnOff Delay Time
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2.0%.
t
off
10
ORDERING INFORMATION
Device
Package
Shipping
2N7000
TO92
1000 Units / Bulk
2N7000G
TO92
(PbFree)
1000 Units / Bulk
2N7000RLRA
TO92
2000 Tape & Reel
2N7000RLRAG
TO92
(PbFree)
2000 Tape & Reel
2N7000RLRM
TO92
2000 Tape & Ammo Box
2N7000RLRMG
TO92
(PbFree)
2000 Tape & Ammo Box
2N7000RLRP
TO92
2000 Tape & Ammo Box
2N7000RLRPG
TO92
(PbFree)
2000 Tape & Ammo Box
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N7000RLRMG | Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS |
| 2N7000RLRPG | Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS |
| 2N7000P | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 2N7000TA | Advanced Small Signal MOSFET |
| 2N7000 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V,開態(tài)漏極電流75mA，N溝道增強型垂直DMOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7000RLRM | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRMG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRP | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRPG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 200MA I(D) | TO-92VAR |
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