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參數(shù)資料
| 型號： | 2N7000RLRPG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS |
| 中文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | LEAD FREE, CASE 29-11, TO-226, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 2N7000RLRPG |
Semiconductor Components Industries, LLC, 2007
March, 2007 Rev. 6
1
Publication Order Number:
2N7000/D
2N7000
Preferred Device
Small Signal MOSFET
200 mAmps, 60 Volts
NChannel TO92
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Source Voltage
V
DSS
60
Vdc
DrainGate Voltage (R
GS
= 1.0 M )
V
DGR
60
Vdc
GateSource Voltage
Continuous
Nonrepetitive (t
p
≤
50 s)
V
GS
V
GSM
±
20
±
40
Vdc
Vpk
Drain Current
Continuous
Pulsed
I
D
I
DM
200
500
mAdc
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
350
2.8
mW
mW/
°
C
Operating and Storage Temperature
Range
T
J
, T
stg
55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
R
JA
357
°
C/W
Maximum Lead Temperature for
Soldering Purposes, 1/16
″
from case
for 10 seconds
T
L
300
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
D
G
NChannel
S
1
Source
3
Drain
2
Gate
200 mAMPS
60 VOLTS
R
DS(on)
= 5
Preferred
devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MARKING DIAGRAM
AND PIN ASSIGNMENT
2N
7000
AYWW
A
Y
WW
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
123
12
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO92
CASE 29
STYLE 22
相關PDF資料 |
PDF描述 |
|---|---|
| 2N7000P | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 2N7000TA | Advanced Small Signal MOSFET |
| 2N7000 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V,開態(tài)漏極電流75mA，N溝道增強型垂直DMOS場效應管) |
| 2N7002-G | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 2N7002BKM | 60 V, 450 mA N-channel Trench MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7000T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 200MA I(D) | TO-92VAR |
| 2N7000TA | 功能描述:MOSFET 60V N-Channel Sm Sig RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000-TR1 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor, N-Channel, TO-92VAR |
| 2N7000-TR7 | 制造商:Vishay Intertechnologies 功能描述:TO226 VNDS06 |
| 2N7000TRI | 制造商:SILICONIX 功能描述:2N7000 FORMED LEADS |
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