- 您現在的位置：買賣IC網 > PDF目錄371470 > 2N7000 (ELAN Microelctronics Corp .) N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V,開態(tài)漏極電流75mA，N溝道增強型垂直DMOS場效應管) PDF資料下載
參數資料
| 型號： | 2N7000 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V,開態(tài)漏極電流75mA，N溝道增強型垂直DMOS場效應管) |
| 中文描述： | N溝道增強型場效應管垂直的DMOS（擊穿電壓60V的，開態(tài)漏極電流七十五毫安，?溝道增強型垂直的DMOS場效應管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 30K |
| 代理商： | 2N7000 |
7-5
2N7000
N-Channel Enhancement-Mode
Vertical DMOS FET
Package Options
Note: See Package Outline section for dimensions.
Ordering Information
Order Number / Package
BV
DSS
/
BV
DGS
60V
R
DS(ON)
(max)
I
D(ON)
(min)
TO-92
5.0
75mA
2N7000
Features
I
I
Free from secondary breakdown
I
I
Low power drive requirement
I
I
Ease of paralleling
I
I
Low C
ISS
and fast switching speeds
Excellent thermal stability
I
I
I
I
Integral Source-Drain diode
I
I
High input impedance and high gain
I
I
Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
Applications
I
I
Motor controls
I
I
Converters
I
I
Amplifiers
I
I
Switches
I
I
Power supply circuits
I
I
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
30V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
TO-92
S G D
相關PDF資料 |
PDF描述 |
|---|---|
| 2N7002-G | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 2N7002BKM | 60 V, 450 mA N-channel Trench MOSFET |
| 2N7002BKS | 60 V, 300 mA dual N-channel Trench MOSFET |
| 2N7002BKT | 60 V, 290 mA N-channel Trench MOSFET |
| 2N7002BKV | 60 V, 340 mA dual N-channel Trench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N-7000 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2N7000 AMO | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000,126 | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-92 |
| 2N7000/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 200 mAmps， 60 Volts |
發(fā)布緊急采購，3分鐘左右您將得到回復。